三极管8050参数(LTDSOT-23M8050硅NPN25V1)

8050是一种非常常见的NPN晶体三极管，经常出现在各种放大电路中，应用广泛，主要用于高频放大。参数：类型：开关型；极性：NPN;材料：硅；较大的集电极电流(A):0.5A;直流增益：10to60;功耗:625mW;大集电极-发射极电压（VCEO）:25;特点频率：150mHzPE8050硅NPN30V1.5A1.1WDG8050硅NPNAFT=190*K2SC8050硅NPNAFT=190*KMC8050硅NPN25V700ma200mW150MHCS8050硅NPN25V1.AFT=190*K

类型：开关型；极性都是NPN;材料：硅；大型集存器电流(A):0.5A;直流增益：10to60;功耗:625mW;大型集存器发电（VCEO）:25;频率：150kHzPE8050硅NPN30V1.5A1.1WDG8050硅NPNAFT=190*K2SC8050硅NPNAFT=190*KMC8050硅NPN25V700ma200mW150MHCS8050硅NPN25V1.AFT=190*K

原上传者:Lgoto

JIANGSUCHANGJIANGELECTRONICSTECHNOLOGYCO.,LTDSOT-TRASISTORSTORSTORSTORS(NPN)Plastic-EncapsulateTransistorsSOT-二FETURESPowersipatipatipation.BASE2.EMITTERMARKING:MAMAIMUMRAIGSGSGSGSAMAMAMAIMUMRA(TA=25℃unlessotherwisenoted)SymbolVCBOVCEOVEBOICPCTjTstgCollector-BaseVoltageCollector-EmitterVoltageEmitter-BaseVoltageCollectorCurrent-ContousColetowersipationtionterateratertoperatuperatertopateratipatipation.2560.80.2150-55-150ELECTRICALCHARACTERISTICS(Tamb=25℃unlessotherwisespecified)ParameterCollector-basebreakdownvoltageCollector-emitterbreakdownvoltageEmitter-basebreakdownvoltageCollectorcut-offcurrentCollectorcut-offcurrentSymbolV(BR)CBOV(BR)CEO*V(BR)EBOICEOTestconsmin402560.140.51.2150VVMHz300μAμAIC=100μA,IE=0IC=1mA，IB=0IE=100μA,IC=0VCB=35V，IE=0VCE=20V，IB=0VCE=1V，IC=5mAVCE=1V，IC=100mAVCE=1V，IC=800mAIC=800mA，IB=800mAIC=800mA，IB=80mAVCE=6V，IC=20mA,f=(1)30MHzhFE(1)DCcurrentgainhFE(2)hFE（3）VCE(sat)VBE(sat)Collector-emittersaturationvoltageBase-emittersaturationv

8050是一种常见的NPN管，其耐压值为25v，Pcm=1w,Id=1.5A,8550是PNP管，两者常作互补应用，其参数与8050完全相同，但导电极性相反。

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